Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices
Identifieur interne : 002309 ( France/Analysis ); précédent : 002308; suivant : 002310Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices
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Abstract
This work addresses the chemical beam epitaxy (CBE) growth and interface properties of a new type of GaP(n)/GaAs(m)/InP(n)/GaAs(k) pseudomorphically strained superlattice structures. The structural properties of these highly strained heterostructures are discussed in light of high-resolution x-ray diffraction and transmission electron microscopy observations. In spite of the large lattice mismatch between the individual GaP, GaAs, and InP layers in the superlattice structures, it is demonstrated that due to a nearly perfect strain balance between GaP (in extension) and InP (in compression) layers, GaP/GaAs/InP/GaAs superlattices with thicknesses up to 1 μm can be achieved with CBE.
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Freundlich</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Space Vacuum Epitaxy Center, University of Houston, Houston</wicri:cityArea></affiliation></author><author><name sortKey="Bensaoula, A" uniqKey="Bensaoula A">A. 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Ponchet</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CEMES-LOE/CNRS, B.P.4347, 31055 Toulouse, France</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>CEMES-LOE/CNRS, B.P.4347, 31055 Toulouse</wicri:regionArea><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">94-0297074</idno><date when="1994-03">1994-03</date><idno type="stanalyst">PASCAL 94-0297074 AIP</idno><idno type="RBID">Pascal:94-0297074</idno><idno type="wicri:Area/Main/Corpus">01EC76</idno><idno type="wicri:Area/Main/Repository">01DA76</idno><idno type="wicri:Area/France/Extraction">002309</idno></publicationStmt><seriesStmt><idno type="ISSN">0734-211X</idno><title level="j" type="abbreviated">J. Vac. Sci. Technol. B</title><title level="j" type="main">Journal of Vacuum Science and Technology B</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium phosphides</term><term>Indium phosphides</term><term>Interface phenomena</term><term>Internal strains</term><term>Molecular beam epitaxy</term><term>Superlattices</term><term>TEM</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>6865</term><term>6855B</term><term>Superréseau</term><term>Gallium arséniure</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Déformation interne</term><term>Epitaxie jet moléculaire</term><term>Phénomène interface</term><term>XRD</term><term>MET</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This work addresses the chemical beam epitaxy (CBE) growth and interface properties of a new type of GaP(n)/GaAs(m)/InP(n)/GaAs(k) pseudomorphically strained superlattice structures. The structural properties of these highly strained heterostructures are discussed in light of high-resolution x-ray diffraction and transmission electron microscopy observations. In spite of the large lattice mismatch between the individual GaP, GaAs, and InP layers in the superlattice structures, it is demonstrated that due to a nearly perfect strain balance between GaP (in extension) and InP (in compression) layers, GaP/GaAs/InP/GaAs superlattices with thicknesses up to 1 μm can be achieved with CBE.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0734-211X</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. Vac. Sci. Technol. B</s0></fA03><fA05><s2>12</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Chemical beam epitaxy of strain balanced GaP/GaAs/InP/GaAs superlattices</s1></fA08><fA11 i1="01" i2="1"><s1>BENSAOULA (A. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>FREUNDLICH (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>BENSAOULA (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>ROSSIGNOL (V.)</s1></fA11><fA11 i1="05" i2="1"><s1>PONCHET (A.)</s1></fA11><fA14 i1="01"><s1>Space Vacuum Epitaxy Center, University of Houston, Houston, Texas 77204-5507</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>CEMES-LOE/CNRS, B.P.4347, 31055 Toulouse, France</s1><sZ>5 aut.</sZ></fA14><fA20><s1>1110-1112</s1></fA20><fA21><s1>1994-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992B</s2></fA43><fA44><s0>8100</s0><s1>© AIP</s1></fA44><fA47 i1="01" i2="1"><s0>94-0297074</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of Vacuum Science and Technology B</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>This work addresses the chemical beam epitaxy (CBE) growth and interface properties of a new type of GaP(n)/GaAs(m)/InP(n)/GaAs(k) pseudomorphically strained superlattice structures. The structural properties of these highly strained heterostructures are discussed in light of high-resolution x-ray diffraction and transmission electron microscopy observations. In spite of the large lattice mismatch between the individual GaP, GaAs, and InP layers in the superlattice structures, it is demonstrated that due to a nearly perfect strain balance between GaP (in extension) and InP (in compression) layers, GaP/GaAs/InP/GaAs superlattices with thicknesses up to 1 μm can be achieved with CBE.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6865</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6855B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Superréseau</s0><s2>T1</s2></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Superlattices</s0><s2>T1</s2></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Déformation interne</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Internal strains</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s2>Q1</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s2>Q1</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Phénomène interface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Interface phenomena</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>XRD</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>MET</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>TEM</s0></fC03><fN21><s1>139</s1></fN21><fN47 i1="01" i2="1"><s0>9408M0829</s0></fN47></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>North American molecular beam epitaxy conference</s1><s3>Stanford, California (USA)</s3><s4>1993-09-13/1993-09-15</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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